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savantic semiconductor product specification silicon pnp power transistors 2SA1187 d escription with mt-200 package high current capability applications audio and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i b base current -2 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1187 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-150v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-3a ; v ce =-4v 50 c ob output capacitance i e =0 ; v cb =-80v;f=1mhz 110 pf f t transition frequency i e =1a ; v ce =-12v 60 mhz h fe classifications o p y 50-100 70-140 90-180 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1187 package outline fig.2 outline dimensions downloaded from: http:///

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